Low-Temperature Formation of High-Quality Interlayer for High- Gate Dielectrics/Ge by Electron-Cyclotron-Resonance Plasma Techniques
Y Fukuda, Y Yazaki, Y Otani, T Sato… - IEEE transactions on …, 2009 - ieeexplore.ieee.org
We have fabricated an Al 2 O 3 /GeO 2 gate-dielectric stack on p-type Ge by electron-cyclotron-resonance
plasma oxidation and sputtering without external substrate heating. We show …
plasma oxidation and sputtering without external substrate heating. We show …
Electro-optic properties of lanthanum-modified lead zirconate titanate thin films epitaxially grown by the advanced sol–gel method
K Uchiyama, A Kasamatsu, Y Otani… - Japanese journal of …, 2007 - iopscience.iop.org
Epitaxially grown lanthanum-modified lead zirconate titanate (PLZT) thin films were deposited
on r-cut sapphire substrates using an advanced sol–gel method. The methanol addition …
on r-cut sapphire substrates using an advanced sol–gel method. The methanol addition …
Influence of a TiO2 adhesion layer on the structure and the orientation of a Pt layer in Pt/TiO2/SiO2/Si structures
N Abe, Y Otani, M Miyake, M Kurita… - Japanese journal of …, 2003 - iopscience.iop.org
Three kinds of TiO 2 layers were formed on SiO 2/Si substrates:(200)-oriented TiO 2 with rutile
structure,(103)-oriented TiO 2 with anatase structure and randomly oriented TiO 2. All the …
structure,(103)-oriented TiO 2 with anatase structure and randomly oriented TiO 2. All the …
Fabrication of Ta2O5∕ GeNx gate insulator stack for Ge metal-insulator-semiconductor structures by electron-cyclotron-resonance plasma nitridation and sputtering …
Y Otani, Y Itayama, T Tanaka, Y Fukuda… - Applied physics …, 2007 - pubs.aip.org
The authors have fabricated germanium (Ge) metal-insulator-semiconductor (MIS) structures
with a 7-nm-thick tantalum pentaoxide (Ta 2 O 5)∕ 2-nm-thick germanium nitride ( Ge N x…
with a 7-nm-thick tantalum pentaoxide (Ta 2 O 5)∕ 2-nm-thick germanium nitride ( Ge N x…
Towards safer risperidone prescribing in Alzheimer's disease
…, J Bertrand, H Uchida, K Yoshida, Y Otani… - The British Journal of …, 2021 - cambridge.org
BackgroundIn the treatment of psychosis, agitation and aggression in Alzheimer's disease,
guidelines emphasise the need to ‘use the lowest possible dose’ of antipsychotic drugs, but …
guidelines emphasise the need to ‘use the lowest possible dose’ of antipsychotic drugs, but …
Continuous temperature measurement of liquid iron and slag tapped from a blast furnace
M Sugiura, Y Otani, M Nakashima… - SICE Journal of Control …, 2014 - Taylor & Francis
Temperature measurements of liquid pig iron coming out of a blast furnace are essential for
estimating the thermal condition in the hearth. The temperature is generally monitored by a …
estimating the thermal condition in the hearth. The temperature is generally monitored by a …
Recent developments on MOCVD of ferroelectric thin films
Y Otani, S Okamura, T Shiosaki - Journal of electroceramics, 2004 - Springer
Ferroelectric Pb(Zr, Ti)O 3 thin films were fabricated by liquid delivery MOCVD using Pb(DPM)
2 , Ti(OiPr) 2 (DPM) 2 and Zr(DIBM) 4 . The deposition rate of 12.3 nm/min was attained …
2 , Ti(OiPr) 2 (DPM) 2 and Zr(DIBM) 4 . The deposition rate of 12.3 nm/min was attained …
Surface passivation of p-type Ge substrate with high-quality GeNx layer formed by electron-cyclotron-resonance plasma nitridation at low temperature
Y Fukuda, H Okamoto, T Iwasaki, Y Otani… - Applied Physics …, 2011 - pubs.aip.org
We have investigated the effects of the formation temperature and postmetallization annealing
(PMA) on the interface properties of GeN x/p-Ge fabricated by the plasma nitridation of Ge …
(PMA) on the interface properties of GeN x/p-Ge fabricated by the plasma nitridation of Ge …
Influence of Pt/TiO2 Bottom Electrodes on the Properties of Ferroelectric Pb(Zr,Ti)O3 Thin Films
S Okamura, N Abe, Y Otani, T Shiosaki - Integrated Ferroelectrics, 2003 - Taylor & Francis
Pb(Zr,Ti)O 3 (PZT) thin films were deposited onto Pt/TiO 2 /SiO 2 /Si substrates with different-types
of TiO 2 layers by liquid delivery MOCVD at 550C. Three kinds of TiO 2 adhesion …
of TiO 2 layers by liquid delivery MOCVD at 550C. Three kinds of TiO 2 adhesion …
Electrical analyses of germanium MIS structure and spectroscopic measurement of the interface trap density in an insulator/germanium interface at room temperature
Y Fukuda, Y Otani, Y Itayama… - IEEE transactions on …, 2007 - ieeexplore.ieee.org
In this paper, we present an equivalent circuit model of a germanium (Ge) MIS structure that
is biased in the inversion region, which includes the effects of the high intrinsic carrier …
is biased in the inversion region, which includes the effects of the high intrinsic carrier …