The international technology roadmap of semiconductors (ITRS) is approaching the historical
end point and we observe that the semiconductor industry is driving complementary metal …

The unique electronic properties of semiconductor nanowires, in particular silicon nanowires
(SiNWs), are attractive for the label-free, real-time, and sensitive detection of various gases. …

When the international technology roadmap of semiconductors (ITRS) started almost five
decades ago, the metal oxide effect transistor (MOSFET) as units in integrated circuits (IC) …

Designing heterostructure materials at the nanoscale is a well-known method to enhance
gas sensing performance. In this study, a mixed solution of zinc chloride and tin (II) chloride …

Block copolymers with different topologies (linear, loop, 3-armed and 4-armed polymers)
containing poly(N-vinylpyrrrolidone) (PVP) antifouling blocks and terminal poly(dopamine-…

In this article, we demonstrated novel methods to improve the performance of pin
photodetectors (PDs) on a germanium-on-insulator (GOI). For GOI photodetectors with a mesa …

We simulated red blood cells flowing in microvessel to examine the induced wall shear stress
variation. A typical peak-valley-peak structure is observed, and it is analyzed in terms of its …

We study the impact of different interlayers (ILs) and ferroelectric materials on charge trapping
during the endurance fatigue of Si ferroelectric field effect transistor (FeFET) with TiN/Hf x …

In this letter, Gate-All-Around (GAA) nanowire (NW) p-MOSFETs with new approaches to
fabricate totally isolated channels in replacement metal gate (RMG) are reported for the first time…

Red blood cell (RBC) motion and trajectories in bifurcated microvessels are simulated using
a two-dimensional immersed boundary-lattice Boltzmann method (IB-LBM). A RBC is …