This review focuses on electrochemical metallization memory cells (ECM), highlighting their
advantages as the next generation memories. In a brief introduction, the basic switching …

We report on the fabrication and characterization of nanoscale memory elements based on
solid electrolytes. When combined with silver, chalcogenide glasses such as Se-rich Ge-Se …

Scalable nonvolatile memory devices that operate at low voltage and current, exhibit multilevel
cell capability, and can be read nondestructively using simple circuitry, are highly sought …

Programmable metallization cell (PMC) memory, also known as conductive bridging RAM (CBRAM),
is a resistive-switching memory based on non-volatile formation and dissolution of …

We describe the materials aspects and electrical characteristics of $ W-( Cu/WO_3)- Cu$
switching elements. These materials are compatible with back-end-of-line processing in CMOS …

A potential replacement for current charge-based memory technologies in the nanoscale
device regime is a form of resistance change memory (RRAM) which utilizes cation transport …

Quantum effects in novel functional materials and new device concepts represent a potential
breakthrough for the development of new information processing technologies based on …

Certain metals can be added to thin films of chalcogenide glasses by photodissolution to
create materials with unique morphology and properties. When Ag is combined in this fashion …

We present a review and primer on the subject of conductive bridging random access
memory (CBRAM), a metal ion-based resistive switching technology, in the context of current …

Programmable metallization cell (PMC) memory utilizes electrochemical control of nanoscale
quantities of metal in thin films of solid electrolyte. A silver or copper layer and an inert …