User profiles for Khang N Huynh
 | Nguyen HD KhangOther name: Nguyen Huynh Duy Khang Ho Chi Minh City University of Education Verified email at hcmue.edu.vn Cited by 830 |
A conductive topological insulator with large spin Hall effect for ultralow power spin–orbit torque switching
Spin–orbit torque switching using the spin Hall effect in heavy metals and topological insulators
has a great potential for ultralow power magnetoresistive random-access memory. To be …
has a great potential for ultralow power magnetoresistive random-access memory. To be …
A novel box for aerosol and droplet guarding and evacuation in respiratory infection (BADGER) for COVID-19 and future outbreaks
The coronavirus disease 2019 (COVID-19) pandemic caused by the severe acute respiratory
syndrome coronavirus-2 (SARS-CoV-2) has infected millions and killed more than 1.7 …
syndrome coronavirus-2 (SARS-CoV-2) has infected millions and killed more than 1.7 …
Ultrahigh efficient spin orbit torque magnetization switching in fully sputtered topological insulator and ferromagnet multilayers
Spin orbit torque (SOT) magnetization switching of ferromagnets with large perpendicular
magnetic anisotropy has a great potential for the next generation non-volatile magnetoresistive …
magnetic anisotropy has a great potential for the next generation non-volatile magnetoresistive …
Ultralow power spin–orbit torque magnetization switching induced by a non-epitaxial topological insulator on Si substrates
NHD Khang, S Nakano, T Shirokura, Y Miyamoto… - Scientific reports, 2020 - nature.com
The large spin Hall effect in topological insulators (TIs) is very attractive for ultralow-power
spintronic devices. However, evaluation of the spin Hall angle and spin–orbit torque (SOT) of …
spintronic devices. However, evaluation of the spin Hall angle and spin–orbit torque (SOT) of …
Low power spin–orbit torque switching in sputtered BiSb topological insulator/perpendicularly magnetized CoPt/MgO multilayers on oxidized Si substrate
T Fan, NHD Khang, T Shirokura, HH Huy… - Applied Physics …, 2021 - pubs.aip.org
Topological insulators (TIs) are promising for efficient spin current sources in spin–orbit
torque (SOT) magnetoresistive random access memory (MRAM). However, TIs are usually …
torque (SOT) magnetoresistive random access memory (MRAM). However, TIs are usually …
Crystal growth and characterization of topological insulator BiSb thin films by sputtering deposition on sapphire substrates
…, M Tobah, T Shirokura, NHD Khang… - Japanese Journal of …, 2020 - iopscience.iop.org
We report on the growth and characterization of BiSb thin films deposited on sapphire substrates
by sputtering deposition with Ar and Kr plasma. By optimizing the growth conditions, we …
by sputtering deposition with Ar and Kr plasma. By optimizing the growth conditions, we …
Nanosecond ultralow power spin orbit torque magnetization switching driven by BiSb topological insulator
NHD Khang, T Shirokura, T Fan, M Takahashi… - Applied Physics …, 2022 - pubs.aip.org
Topological insulators (TIs) are promising for spin–orbit torque (SOT) switching thanks to
their giant spin Hall angle. SOT switching using TIs has been studied so far in the thermal …
their giant spin Hall angle. SOT switching using TIs has been studied so far in the thermal …
Efficient spin current source using a half-Heusler alloy topological semimetal with back end of line compatibility
… I N increases with increasing Ar pressure up to 1 Pa, above which I N saturates because
higher Ar pressure reduces the recoil energy of Ar ions which may implant into the YPtBi thin …
higher Ar pressure reduces the recoil energy of Ar ions which may implant into the YPtBi thin …
Large inverse spin Hall effect in BiSb topological insulator for 4 Tb/in2 magnetic recording technology
HH Huy, J Sasaki, NHD Khang, S Namba… - Applied Physics …, 2023 - pubs.aip.org
… Instead, the thermal noise N th comes from the sheet resistance of BiSb. Thus, it is … (6);
while the thermal noise and amplifier noise are independent of θ SH , the magnetic noise N mag …
while the thermal noise and amplifier noise are independent of θ SH , the magnetic noise N mag …
Epitaxial growth and characterization of Bi1-xSbx spin Hall thin films on GaAs (111) A substrates
Y Ueda, NH Duy Khang, K Yao, PN Hai - Applied Physics Letters, 2017 - pubs.aip.org
We grew and characterized Bi 1-x Sb x thin films on GaAs (111) A substrates by molecular
beam epitaxy. By optimizing the growth condition, we were able to grow Bi 1-x Sb x thin films …
beam epitaxy. By optimizing the growth condition, we were able to grow Bi 1-x Sb x thin films …
